低温形成栅介质膜电特性的容-压法分析  

CV Method Analysis of Electrical Characteristcs of GateDielectric Film Formed By Low Temperature Deposition

作　　者：章晓文[1] 陈蒲生[1] 王锋 

机构地区：[1]华南理工大学应用物理系 [2]广东省电子技术学校

出　　处：《半导体技术》1998年第4期48-51,共4页Semiconductor Technology

基　　金：国家自然科学基金;广东省自然科学基金

摘　　要：采用准静态Ｃ－Ｖ特性和高频Ｃ－Ｖ特性测试技术，结合温偏（Ｂ－Ｔ）实验，测试了等离子体增强化学汽相淀积（ＰＥＣＶＤ）法低温制备的富氮的ＳｉＯｘＮｙ栅介质膜的电学特性（界面态密度、固定电荷密度、介电常数、可动离子密度），结果表明，制备出的栅介质膜性质优良。The electrical characteristics(interface state density,fixed charge density,movable ion density and dielectric constant)of nitrogenrich SiO_xN_y gate dielectric film fabricated by plasma enhanced chemical vapor deposition(PECVD)were measured with quasistatic CV characteristic and high frequence CV characteristic testing technology combing BT experiment.The results indicate that SiO_xN_y gate dieldectric films with better properties can be fabricated by suitable PECVD low temperature process technology.

关 键 词：等离子体增强 化学汽相沉积 PECVD 硅化物 

分 类 号：TN304.205[电子电信—物理电子学]