AlGaInP橙色发光二极管的研制  

Development of AlGaInP Orange Light Emitting Diode

作　　者：王国宏[1] 马骁宇[1] 王树堂[1] 曹青[1] 彭怀德[1] 李玉璋[1] 陈良惠[1] 

机构地区：[1]中国科学院半导体研究所光电子器件国家工程研究中心

出　　处：《半导体技术》1998年第4期10-12,共3页Semiconductor Technology

摘　　要：利用ＬＰ－ＭＯＣＶＤ外延生长ＡｌＧａＩｎＰＤＨ橙色发光二极管，２０ｍＡ工作条件下发光波长峰值在６２８ｎｍ，ＦＷＨＭ为２６ｎｍ，１５°（２θ１／２）视角封装后亮度达到３１０ｍｃｄ；８０ｍＡ工作条件下亮度达到１０００ｍｃｄ。并且分析了生长过程中杂质向有源区扩散对发光光谱的影响。LPMOCVD technology is employed to manufacture AlGaInP orange light emitting diodes.At 20mA 628nm wavelength light emitting is obtained and the FWHM is 26nm.310mcd and 1000mcd of brightness have been reached under 20mA and 80mA respectively for the light emitting diode lamps with 15°viewing angle(2θ1/2).The effect of the diffusion of dopants toward the active layer on luminous spectrum is discussed.

关 键 词：LP-MOCVD 发光二极管 外延生长 

分 类 号：TN383.04[电子电信—物理电子学] TN304.054