硅材料功率半导体器件结终端技术的新发展  

New Development of Junction Termination Techniques for Power Devices

作　　者：张彦飞[1] 吴郁[1] 游雪兰[1] 亢宝位[1] 

机构地区：[1]北京工业大学功率半导体器件与功率集成电路研究室,北京100124

出　　处：《电子器件》2009年第3期538-546,共9页Chinese Journal of Electron Devices

基　　金：国家自然科学基金资助(60676049)

摘　　要：综述了硅材料功率半导体器件常用结终端技术的新发展。介绍了场板、场限环、结终端延伸、横向变掺杂、深槽、超结器件的终端等一系列终端技术发展中出现的新结构、新原理和新数据,并对其优缺点与适用范围进行了说明。New development of junction termination techniques for silicon power semiconductor devices are reviewed including the floating field ring, the field plate, the junction termination extension, the variation in lateral doping, ＂the Deep Trench＂ and the superjunction devices termination. New termination structure, new principle and new data are presented, also their merits and drawbacks, and ranges of application.

关 键 词：功率器件 结终端 击穿电压 

分 类 号：TN323.4[电子电信—物理电子学]