纳米SiC陶瓷的超高压烧结研究(英文)  

FABRICATION OF SiC CERAMIC BY ULTRA-HIGH PRESSURE TECHNIQUE

作　　者：鲜晓斌[1] 谢茂林[1] 罗德礼[1] 冷邦义[1] 陈伟[1] 鲁伟员[2] 

机构地区：[1]中国工程物理研究院,四川绵阳621900 [2]四川艺精超硬材料有限公司,四川江油621700

出　　处：《硅酸盐学报》2009年第7期1268-1272,共5页Journal of The Chinese Ceramic Society

摘　　要：以纳米SiC为原料,用两面顶压机在不同工艺条件下(1000～1300℃,4.0～4.5GPa,15～35min)实现了4%(质量分数,下同)Al2O3烧结助剂添加的SiC陶瓷体的烧结。研究了烧结工艺对SiC陶瓷性能的影响。用X射线衍射、扫描电镜、显微硬度测试仪等对SiC高压烧结体进行了表征。结果表明:Al2O3是有效的低温烧结助剂,在超高压工艺下添加4%Al2O3即可实现SiC陶瓷全致密化烧结;烧结体晶粒长大得到抑制,维持在纳米级,晶格常数收缩了约0.45%;烧结体显微硬度和密度随烧结温度、烧结压力的升高或保温时间的延长而提高。A high density SiC ceramic with 4% （in mass, the same below） Al2O3 as a sintering additive was fabricated with SiC nano-particles as raw materials under different conditions （i.e., 1000-1300℃, 4.0-4.5 GPa, 15-35 min） using a two-face anvils press The effects of sintering parameters on the mechanical properties of SiC ceramics were investigated. The SiC ceramic was characterized by X-ray diffraction, scanning electronic microscopy, energy dispersive spectrometer and micro-hardness instrument. The results show that, the SiC mixture with only 4% Al2O3 can be sintered by a ultra-high pressure technique when Al2O3 is used as an effective sintering additive. The crystalline grain size of the SiC ceramic is in nano-scale, and its crystal lattice shrinkage is about 0.45%. Its micro-hardness and density increases with the increment of the sintering temperature, pressure and time.

关 键 词：碳化硅 氧化铝 烧结 超高压 

分 类 号：TQ174[化学工程—陶瓷工业]