二极管非超突变结C-V幂律分析  

Power-low for Analysis of Impurity Distribution in Non-hyperadrupt Junction

作　　者：李潮锐[1] 唐强[1] 刘小伟[1] 

机构地区：[1]中山大学物理科学与工程技术学院,广东广州510275

出　　处：《中山大学学报（自然科学版）》2009年第4期20-23,共4页Acta Scientiarum Naturalium Universitatis Sunyatseni

基　　金：国家自然科学基金资助项目(1050503310675175)

摘　　要：基于杂质浓度分布的突变结或线性缓变结模型,二极管p-n结(电)容—(电)压关系可简单地由C-V幂律描述。精密的实验测量数据显示,采用指数n=1/2或n=1/3不足以全面描述非超突变结C-V关系。通过引入杂质浓度幂函数分布规律并利用泊松方程,从而获得二极管p-n结C-V幂律通式,而指数n=1/2或n=1/3仅是新模型的特例。运用合理的数据处理技术,由一系列实验结果说明该幂律分析方法更具普适性。Power-low can present the relation of capacity-voltage for diode abrupt p-n junction and the linearly graded p-n junction, but precise measurements show there existing limitation in these tradition models. Based on experiment data from the most common commercial diodes, the power-low with n = 1/2 or n = 1/3 can not well described the non-hyperabrupt junction. The universal form of power-low is formulated from Passion equation for impurity concentration distribution in diode p-n junction. With improved C-V power-low, data from non-hyperadrupt junction can be expressed accurately with this modified model but the component of n = 1/2 or n = 1/3 as the simple cases. The improved C-V power-low develops the new method to get more accurate physics parameters for diode p-n junction.

关 键 词：P-N结 杂质浓度 C-V幂律 泊松方程 

分 类 号：O474[理学—半导体物理]