靶压对磁控溅射GeC薄膜折射率的影响  

Effects of Target Voltage on the Refractive Index of Magnetron Sputtered GeC Thin Films

作　　者：何光宗[1] 熊长新[1] 李钱陶[1] 吴小丽[1] 

机构地区：[1]华中光电技术研究所-武汉光电国家实验室,湖北武汉430074

出　　处：《光学与光电技术》2009年第4期27-29,共3页Optics & Optoelectronic Technology

摘　　要：采用磁控溅射技术,以碳氢气体和氩气为工作气体,在Ge基底上制备了GeC薄膜。研究了靶压对薄膜折射率的影响,发现在较高的靶压下制备的GeC薄膜具有较低的折射率,而在较低的靶压下则得到了高折射率的薄膜。通过控制溅射靶压,制备了折射率在2.5～3.8之间可变的GeC薄膜。利用拉曼光谱研究了GeC薄膜的结构。薄膜样品的硬度测试表明,较低折射率的GeC薄膜具有较高的硬度。GeC thin films were deposited onto Ge substrates by magnetron sputtering deposition with argon and hydrocarbon gas. The effects of target voltage on the refractive index of the deposited thin films were investigated by its FTIR transmittance. It is reported that the GeC thin films with low refractive index could be prepared at high target voltage, and the films deposited at high target voltage showed a high index. GeC thin films with refractive index of 2. 5 - 3. 8 were prepared by controlling the target voltage during sputtering. The structure of the deposited GeC thin films was investigated by Raman spectroscopy. GeC thin films with lower index showed higher value in the micro hardness testing.

关 键 词：靶压 GeC薄膜 磁控溅射 折射率 

分 类 号：O484.41[理学—固体物理]