80C196单片机系统X射线剂量增强效应研究  

X-Ray Dose Enhancement Effects on 80C196 Microcomputer System

作　　者：褚忠强[1] 徐曦[1] 牟维兵[1] 詹峻岭[1] 赵刚[1] 

机构地区：[1]中国工程物理研究院电子工程研究所,四川绵阳621900

出　　处：《微电子学》2009年第4期555-558,共4页Microelectronics

摘　　要：研究了主要由N80C196KC20、PSD501B1和X24F128三部分组成的单片机系统在X射线辐射环境中的剂量增强效应。对系统及三部分单元电路进行了X射线和γ射线的总剂量对比辐照实验,测量了系统工作电流,同时监测196芯片和PSD芯片输出波形的变化。研究了单元电路的辐照敏感性对系统辐射损伤的贡献,得到了系统及单元电路的剂量增强系数。从实验结果综合分析得出:相对而言,PSD单元电路是辐射敏感区域,严重影响了系统的抗辐射能力;系统和单元电路的剂量增强并不显著,一方面,芯片采用的是塑封工艺,不存在重金属材料,另一方面,封装外壳吸收了部分低能X射线,实验测量到的剂量增强系数小于真实值。Dose enhancement effects of microcomputer system consisting of N80C196KC20, PSD501B1 and X24F128 were studied in X-ray and γ-ray irradiation environment. Comparative experiments were made on X-ray and γ-ray total dose irradiation of the system and cell circuits. The operating current of the system was measured, and variations of output signals of NSOC196KC20 and PSD501B1 were monitored. Contribution of radiation sensitivity of cell circuits on radiation damage of the system was investigated, and dose enhancement factors were obtained. Experiment results showed that PSI） was more sensitive to radiation, which greatly affected radiation hardness of the system, and that dose enhancement of the system and cell circuits was insignificant, as major low-energy X-ray was absorbed by plastic packages, also, DEF measured in experiment was smaller than actual value.

关 键 词：单片机系统 单元电路 总剂量辐照 剂量增强效应 

分 类 号：TN47[电子电信—微电子学与固体电子学]