超薄高k栅介质Ge-pMOSFET的电特性研究  

Study on Electrical Characteristics of Ge-pMOSFET with Ultrathin High-k Gate Dielectrics

作　　者：陈娟娟[1] 徐静平[1] 陈卫兵[2] 

机构地区：[1]华中科技大学电子科学与技术系,武汉430074 [2]湖南工业大学计算机与通信学院,湖南株洲412008

出　　处：《微电子学》2009年第4期575-579,共5页Microelectronics

基　　金：国家自然科学基金资助项目(60776016)

摘　　要：采用MEDICI模拟器,对高k栅介质Ge-pMOSFET的电特性进行了研究。通过考虑短沟道效应和边缘场效应,着重分析了栅介质介电常数、氧化物固定电荷密度以及沟道长度等对器件阈值电压和亚阈斜率的影响,研究认为:为获得优良的电性能,栅介质的k值需小于50,固定电荷面密度至少应在1.0×1012cm-2以下。Using MEDICI simulator, a series of electric characteristics of Ge-MOSFET with ultrathin high-k gate dielectrics was studied. With short channel-length effect and fringe field effect taken into consideration, impact of gate dielectric constant, fixed oxide charge area density and channel length on threshold voltage and sub-threshold slope was analyzed. It has been concluded that it is necessary to have a gate dielectric k value below 50 and an interface fixed oxide charge area density less than 1.0 ×10^12cm^2 for better electric characteristics.

关 键 词：Ge-pMOSFET 高K栅介质 超薄栅介质 亚阈斜率 

分 类 号：TN432[电子电信—微电子学与固体电子学]