n型GaN欧姆接触的研究进展  

Advances in Research on Ohmic Contacts of n-Type GaN

作　　者：王忆锋[1] 唐利斌[1] 

机构地区：[1]昆明物理研究所,云南昆明650223

出　　处：《红外》2009年第8期1-8,共8页Infrared

摘　　要：Ⅲ-Ⅴ族GaN基材料以其在紫外光子探测器、发光二极管、高温及大功率电子器件等方面的应用潜能而被广为研究。其中,低阻欧姆接触是提高GaN基器件光电性能的关键。金属/GaN界面上较大的欧姆接触电阻一直是影响器件性能及可靠性的一个问题。对于各种应用来说,GaN的欧姆接触需要得到改进。通过对相关文献的归纳分析,本文主要介绍了近年来在改进n-GaN工艺、提高欧姆接触性能等方面的研究进展。The Ⅲ-Ⅴ GaN-based materials are being widely investigated for their application potential in ultraviolet photodetectors, light emitting diodes and high temperature and high power electronic devices etc.. Low resistance ohmic contacts are essential for improving the electrical and optical performance of GaN-based devices. The high ohmic contact resistance at metal/GaN interfaces is still a problem which has influence on the performance and reliability of GaN-based devices. In various applications, the ohmic contacts of GaN-based devices should be improved. By summarizing and analyzing the related papers published in recent years, the advances in the research on improvement of n-GaN material processes and ohmic contacts are presented mainly.

关 键 词：GAN 欧姆接触 紫外光子探测器 发光二极管 高电子迁移率晶体管 异质结场效应晶体管 

分 类 号：TN304.23[电子电信—物理电子学]