硅片力学行为与表面损伤  

MECHANICAL BEHAVIOUR AND SURFACE DAMAGE OF SILICON WAFER

作　　者：谢书银[1,2] 石志仪[1,2] 蔡爱军[1,2] 李立本[1,2] 张锦心[1,2] 

机构地区：[1]中南工业大学应用物理与热能工程系 [2]浙江大学硅材料国家重点实验室

出　　处：《中南工业大学学报》1998年第4期344-346,共3页Journal of Central South University of Technology(Natural Science)

基　　金：硅材料国家重点实验室基金

摘　　要：研究了硅片力学行为与表面损伤的关系．结果表明，Ｍ２０金刚砂研磨使硅片表面产生损伤和微小裂纹，研磨硅片在常温工艺中容易破碎，机械强度较低；在高温工艺中容易弯曲或翘曲，抗形变能力差．研磨后化腐３０μｍ左右可使强度提高１倍多，达到材质固有强度，高温弯曲度变化降到磨片的１／４～１／３．研磨片表面７～８μｍ的微腐也可使强度提高到材质强度的７０％～８０％，弯曲度变化降到磨片的１／２～２／３．The damages and fine cracks were generated in the surface of silicon wafers during grinding of silicon wafers by M20 diamond grain. The mechanical strength of ground silicon wafers was low, and they were easy to fracture in normal temperature processes; their resistace to deformation was poor and, they were easy to bend or warp in high temperature processes. When the grinding of the silicon wafer was followed by chemical etching of about 30 μm, the strength of the wafers was increased twice and achieved the intrinsic strength of the material, and the bend change of the wafers was decreased to 1/3～1/4 that of the ground wafers. Slight etching with 7～8 μm increased the strength of the silicon wafers to 70%～80% of the intrinsic strength of the material and decreased the bend change to 2/3～1/2 that of the ground wafers.

关 键 词：抗弯强度 弯曲率 表面损伤 硅片 力学行为 

分 类 号：TN304.12[电子电信—物理电子学]