使用低电阻金属铝制造薄膜晶体管阵列信号电极  

Low Resistant Metal for Thin Film Transistors

作　　者：刘翔[1] 陈旭[1] 谢振宇[1] 高浩然[1] 王威[1] 

机构地区：[1]北京京东方光电科技有限公司,北京100176

出　　处：《液晶与显示》2009年第4期533-536,共4页Chinese Journal of Liquid Crystals and Displays

摘　　要：金属电阻是影响大尺寸TFT-LCD信号延迟的关键因素。研究了利用低电阻率金属Al制作大尺寸TFT阵列信号线的生产工艺,发现在完成有源半导体层刻蚀后残留的少量Cl2会在后续工艺中对金属Al造成腐蚀,严重地影响了产品的性能。通过优化刻蚀工艺,采用活性更高的SF6去除刻蚀有源半导体层时残留的少量Cl2,避免了金属Al腐蚀的发生。Low resistant metal is one of key factors in delay-time of large TFT-LCD. In this article low resistant metal aluminum has been investigated. After a Si island etch process, it is found that remained Cl2 had eroded aluminum. This has severity influence on products. By optimizing the etch process, more active SF6 can remove remained Cl2 in a-Si island etch process. So aluminum erodibility can be avoided.

关 键 词：薄膜晶体管 铝 腐蚀 刻蚀 

分 类 号：TN321.5[电子电信—物理电子学]