宽带GaAs MMIC开关耦合器芯片设计  

Design of a Wide Band GaAs MMIC Switch Coupler

作　　者：刘文杰[1] 吴洪江[1] 高学邦[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《微纳电子技术》2009年第8期498-501,共4页Micronanoelectronic Technology

基　　金：国家重点基础研究发展计划资助项目(2009CB320200)

摘　　要：介绍了一种宽带开关耦合器芯片的研制。在GaAspHEMT工艺平台上将宽带单刀双掷开关和兰格耦合器集成在一个芯片上，在实现二路功率分配功能的同时，还提供了在两个输出端口之间±90°相位切换的功能。该芯片频率范围覆盖6～18GHz，在整个频带内插入损耗〈3．7dB，相位误差〈14°，输入输出驻波比〈1．8：1。芯片尺寸1．5mm×3．0mm×0．1mm。详细描述了电路的设计流程，并提供最终的测试结果。该芯片具有频带宽、体积小、使用方便等特点，可应用于不同的微波系统。The design of a wide band GaAs MMIC switch coupler was introduced. A single pole double throw （SPDT） switch and a Lange coupler were integrated on a chip by GaAs pHEMT technology. The allocation function of power 2-spiiter was realized and the ±90° phase shifts between the two output ports were also supplied . The frequency covers 6 - 18 GHz bandwidth. The insertion loss is less than 3.7 dB, the output ports phase error is less than 14°, and VSWR is less than 1.8 ： 1. The chip size is 1.5mm×3.0mm×0.1mm. The design procedure of the circuit was described, and the test results were given. The chip is of wide band, small size and easy to use, and can be applied in different microwave systems.

关 键 词：宽带 砷化镓微波单片集成电路 PHEMT 微波开关 兰格耦合器 

分 类 号：TN43[电子电信—微电子学与固体电子学] TN304.23