GaAs和AlGaAs掺碳MOVPE生长技术进展  

PROGRESS OF CARBON DOPING OF GaAs AND GaAlAs GROWN BY METALORGANIC VAPOR PHASE EPITAXY

作　　者：公延宁[1] 莫金玑[1] 夏冠群[1] 

机构地区：[1]中国科学院上海冶金研究所

出　　处：《功能材料与器件学报》1998年第3期145-155,共11页Journal of Functional Materials and Devices

摘　　要：Ｃ作为ＩＩ－Ｖ族半导体中常用的ｐ型掺杂剂，由于它的掺杂浓度极限高和扩散系数低，逐渐引起人们的关注，并在许多应用中显示出潜力而有望代替常规的ｐ型掺杂剂，如Ｚｎ和Ｂｅ。根据近期研究成果，对采用ＭＯＶＰＥ技术生长的掺ＣＧａＡｓ和ＡｌＧａＡｓ性能研究中的若干方面给予了系统介绍和讨论。在此基础上对其应用作了总结，并对今后工作提出了几点建议。Being with high doping concentration and low diffusivity, carbon hasemerged as an attractive and promising p-type dopant in III-V semiconductors, alternative to the conventional acceptors such as Zn and Be for many applications.In this paper, systematically summarizing recent achievements, several aspects of carbon doping and characteristics of carbon doped GaAs and GaAlAs grown by metalorganic vapor phase epitaxy (MOVPE) are discussed and at based on it the applications and further researches of carbon doping are suggested.

关 键 词：半导体 MOVPE 砷化镓 薄膜 掺碳 

分 类 号：TN304.23[电子电信—物理电子学]