垂直结构GaN基LEDs电流分布计算分析  

Current Distribution Study of Vertical Structure GaN-Based Light-Emitting Diodes

作　　者：黄亚军[1] 王良臣[1] 刘志强[1] 伊晓燕[1] 王国宏[1] 李晋闽[1] 

机构地区：[1]中国科学院半导体研究所照明研发中心,北京100083

出　　处：《半导体技术》2009年第9期861-863,871,共4页Semiconductor Technology

摘　　要：电流分布是影响大功率LEDs器件性能的重要因素,与传统结构GaN基器件比较,垂直结构器件通过采用上下电极分布,明显改善了LEDs器件内部电流分布均匀性。通过理论分析与数值计算,建立起了垂直结构GaN基LEDs电流分布模型,研究了垂直结构GaN基LEDs电流分布及I-V特性。结果表明,与传统平面结构比较,垂直结构GaN基LEDs的电流分布均匀性得到了明显改善,同时正向电压降低约7%。最后,通过晶片键合与激光剥离技术,制备了垂直结构GaN基LEDs,测试结果表明,实验结果和理论计算值相吻合。该结果对GaN基LEDs器件的优化设计具有重要指导意义。Current distribution is an important factor to high-power LEDs, compared with conventional GaN based LEDs structure, vertical electrodes structure can improve the current uniformity to some extend. The current distribution and I-V characteristics of vertical structure GaN-based LEDs with ITO current spreading layer was analyzed by theoretical calculation. The results indicate that the current uniformity of vertical structure is improved drastically. The forward voltage is decreased 7 %. Vertical structure GaN-based LEDs was fabricated and the electrical character was measured. Experiment result exhibits good agreement with the theoretical calculation. The results have great signicanle for the optimization of GaN-based LEDs design.

关 键 词：氮化镓 垂直结构 发光二极管 电流分布 激光剥离 

分 类 号：TN312.8[电子电信—物理电子学]