硅基PZT热释电薄膜湿法刻蚀技术研究  

Study on Wet-etching of PZT Thin Films on Silicon Substrate

作　　者：梁庭[1] 李珺泓[1] 杜文龙[1] 薛晨阳[1] 张文栋[1] 

机构地区：[1]中北大学仪器科学与动态测试教育部重点实验室,山西太原030051

出　　处：《纳米科技》2009年第4期24-27,共4页

基　　金：基金项目：国家高技术研究发展计划（863计划）重大项目（2006AA040601）

摘　　要：通过对不同组合比的PZT薄膜湿法刻蚀技术研究，成功地配制出两种不同的刻蚀液，主要以HF、NH4F、HCl、NH4ClEDTA、HNO3为原料，NH4F、NH4Cl和EDTA的引入，有效地实现了刻蚀速率的可控性，并对PZ0.15R0.85、PZ0.3T0.7、PZ0.5T0.5和P1.1Z0.3T0.3四种薄膜进行微图形化研究，分析了刻蚀液对各种成份的刻蚀机理，通过实验，得到了分别刻蚀四种薄膜的刻蚀液的最佳配比，并对四种薄膜的刻蚀速率进行了研究。AA novel wet-etching process pyroelectric thin films of PZT with varied composition was studied, and two dif- ferent etchant were prepared successfully, The etchant mainly were composed of HF,NH4F,HCl,NH4Cl,EDTA and HNO3, whose etch ability could be effectively controlled by the introduce of NH4F,NH4Cl and EDTA. Four kinds of thin films of PZ0.15T0.85,PZ0.3T0.7,PZ0.5T0.5 and P 1.1Z0.3T0.3 were micropatterned, and the etching mechanism for different compositions were analyzed. The best ratio of etchant were obtained for etching four different thin films. And the etch rate were studied.

关 键 词：PZT薄膜 热释电 湿法刻蚀 

分 类 号：TN405[电子电信—微电子学与固体电子学]