SOI键合材料的TEM研究  

TEM Study on Bonded SOI Materials

作　　者：王敬[1] 屠海令[1] 刘安生[1] 周旗钢[1] 朱悟新[1] 张椿[1] 

机构地区：[1]北京有色金属研究总院

出　　处：《稀有金属》1998年第4期274-276,共3页Chinese Journal of Rare Metals

摘　　要：用横断面透射电子显微术（ＴＥＭ）研究了用键合方法获得的ＳＯＩ材料的界面结构。绝缘层二氧化硅和硅膜的厚度非常均匀，Ｓｉ膜／ＳｉＯ２以及ＳｉＯ２／Ｓｉ基体的界面平直且结合紧密，在界面上没有观察到缺陷和孔洞。The interface structure of silicononinsulator (SOI) materials fabricated by wafer bonding was studied by crosssectional transmission electron microscopy (TEM). Both silicon film and insulator layer (SiO2) are homogeneous in thickness. The interfaces between silicon film and SiO2 or SiO2 and silicon substrate are even and wellbonded. No defect and hole were observed in the interfaces.

关 键 词：硅片键合 SOI 界面 微结构 TEM 

分 类 号：TN304.12[电子电信—物理电子学]