辅助加热PCVD-TiN薄膜的制备及影响因素  

Preparation of Auxiliary Heating PCVD TiN Coatings and Their Effect Factors

作　　者：彭红瑞[1] 石玉龙[1] 谢雁[1] 李世直[1] 赵程[1] 

机构地区：[1]青岛化工学院等离子体表面技术研究所

出　　处：《青岛化工学院学报（自然科学版）》1998年第3期273-277,共5页Journal of Qingdao Institute of Chemical Technology(Natural Science Edition)

摘　　要：研究了反应气体对辅助加热ＰＣＶＤＴｉＮ薄膜制备的影响。结果表明，提高反应气体中ＴｉＣｌ４的含量可以提高薄膜的沉积速率，而且对薄膜内的氯含量没有影响。提高反应气体中的Ｖ（Ｈ２）／Ｖ（Ｎ２）可以略降低薄膜内的氯含量，在Ｖ（Ｈ２）／Ｖ（Ｎ２）＝２，ＴｉＣｌ４的体积分数为１０％左右时ＴｉＮ薄膜的硬度最高。随着反应气压的升高，沉积速率呈正比上升而显微硬度却下降。The effect of deposition gases on auxiliary heating PCVD TiN coatings has been studied. The experiments indicated that with the increase of TiCl 4 content in deposition gases the deposition rate increased and the content of Cl in TiN film remained constant.While H 2/N 2 increased, the content of Cl decreased a little. And at H 2/N 2=2,TiCl 4 content at 10%,the microhardness of TiN reached its maximum value . With the increase of reaction pressure, the deposition rate increased but the microhardness decreased.

关 键 词：辅助加热 PCVD TIN薄膜 薄膜 制备 

分 类 号：TG174.442[金属学及工艺—金属表面处理] TB43[金属学及工艺—金属学]