大功率激光二极管列阵的硅基微通道热沉研制  

Silicon microchannel heat sinks for high-power laser diode arrays

作　　者：杨涛[1] 何叶[1] 刘婷婷[1] 

机构地区：[1]西南科技大学信息工程学院,四川绵阳621010

出　　处：《光学精密工程》2009年第9期2170-2175,共6页Optics and Precision Engineering

基　　金：国防基础科研基金资助项目(No.K1303060115);教育部重点科研基金资助项目(No.204119);四川省教育厅重大培育基金资助项目(No.07ZZ038)

摘　　要：为了提高大功率激光二极管列阵的散热效率以便提高其寿命和波长稳定性,研制了一种封装集成度较高的屋脊式硅基微通道热沉。将田口稳健设计方法用于微通道热沉的优化设计,利用正交试验和信噪比分析实现了参数的稳健优化。以(110)单晶硅作为基片,采用KOH各向异性刻蚀和硅-玻璃-硅三层阳极键合方法制作出了通道宽度约为50μm的微通道热沉,通道壁面粗糙度优于0.1μm。采用激光二极管芯片对样品进行了封装和测试,利用砷化镓激光波长的温度漂移系数估算出了中间激光二极管的有源区温升,从而计算出了热沉的热阻。测试结果表明,该微通道热沉的单位面积热阻约为0.070 cm2.K/W,与有限元分析结果基本一致。To improve the heat dissipation efficiency and to enhance the lifetime and wavelength stability for diode lasers, a roof-like silicon microchannel heat sink characterized by a high integration level is developed. Taguchi robust design method is applied to the design of microchannel heat sinks and orthogonal experiments and signal-noise ratio calculation are carried out to optimize the key parameters. A mierochannel heat sink prototype with a channel width around 50 μm and a roughness better than 0.1 μm is fabricated on a （110） silicon substrate by using a KOH anisotropic etching and an anodic bonding, and laser diode bars are welded on it to test its thermal resistance. The active region temperature rise of the middle bar is estimated by using the temperature coefficient of GaAs laser wavelength, and the thermal resistance is calculated. Experimental results show that the thermal resistance per unit area is O. 070 cm^2· K/W, which agrees with that calculated by the finite element method.

关 键 词：激光二极管列阵 微通道热沉 稳健设计 数值传热分析 封装 

分 类 号：TN248.4[电子电信—物理电子学]