溶液法铝诱导晶化制备多晶硅薄膜  

Preparation of poly-slicon thin film by aluminum induced crystallization based on Al-salt solution

作　　者：罗翀[1] 孟志国[1] 王烁[1] 熊绍珍[1] 

机构地区：[1]南开大学光电子器件与技术研究所,天津300071

出　　处：《物理学报》2009年第9期6560-6565,共6页Acta Physica Sinica

基　　金：国家高技术研究发展计划(批准号:2004AA303570);国家自然科学基金(批准号:60437030)资助的课题~~

摘　　要：采用铝(Al)盐溶液作为诱导源进行了非晶硅晶化成多晶硅的研究.光学显微镜观测与Raman光谱分析表明,合适配比的铝盐溶液能够将非晶硅予以诱导晶化.采用剥层XPS测试分析,探究了Al盐溶液与硅表面可能的化学反应以及随之发生的硅-铝层交换的过程.最后对溶液法诱导晶化的机理进行了讨论.A new method to prepare polycrystalline silicon thin film from aSi thin films using aluminate solution as induced source was introduced in this article.According to the analysis using optical microscope and Raman spectrum,it was indicated that the a-Si thin film could successfully be crystallized in certain Al-salt solutions.Using the X-ray photoelectron spectroscopy explored by shelling the samples into several sub-layers,the possible chemical reaction between the surface of silicon and aluminate solution was found and the continuous layer exchange process was confirmed.In the end,the mechanism of solution-based aluminum-induced crystallization was discussed.

关 键 词：铝诱导晶化 多晶硅薄膜 溶液法 

分 类 号：O484[理学—固体物理]