用于浸没式工艺的光刻胶研究进展  

Progress in Photoresist for Immersion Lithography

作　　者：何鉴[1] 盛瑞隆[2] 穆启道[1] 

机构地区：[1]北京科华微电子材料有限公司,北京101312 [2]中国科学院上海有机化学研究所,上海200032

出　　处：《影像科学与光化学》2009年第5期379-390,共12页Imaging Science and Photochemistry

基　　金：北京市科技计划项目(课题编号:Z08080302110801)

摘　　要：浸没式光刻技术是在原干法光刻的基础上采用高折射率浸没液体取代原来空气的空间,从而提高光刻分辨率的一种先进技术.此项技术的实际应用,为当前IC产业的飞速发展起到了关键的作用.本文概述了浸没式光刻技术的发展历程和浸没式光刻胶遇到的挑战及要求;对浸没式光刻胶主体树脂、光致产酸剂及添加剂的研究进展进行了综述;最后对浸没式光刻胶的研究发展方向作了进一步的探讨及初步预测.Immersion lithography is an advanced technology to improve the resolution, which uses high refractive index immersion liquids to replace the original air space based on dry lithography. The application of the technology plays a key role in the rapid development of IC industry. This paper gives an overview of development history of immersion lithography, the challenges being faced and the requirements of the immersion photoresist; the recent progress of the main resin, the photoacid generator and the additives are reviewed. At last the research and development trend of immersion photoresist is explored and a preliminary forecast is made.

关 键 词：浸没式光刻 光刻胶 主体树脂 光致产酸剂 

分 类 号：TN305.7[电子电信—物理电子学]