氢化微晶硅薄膜的两因素优化及高速沉积  

Optimized Growth Conditions and High Deposition Rate of μc-Si∶H Films

作　　者：申陈海[1] 卢景霄[1] 陈永生[1] 郭学军[1] 

机构地区：[1]郑州大学物理工程学院,材料物理教育部重点实验室,郑州450052

出　　处：《真空科学与技术学报》2009年第5期494-498,共5页Chinese Journal of Vacuum Science and Technology

基　　金：国家重点基金研究发展计划(批准号:No.2006CB202601)

摘　　要：采用甚高频等离子体辅助化学气相沉积技术(VHF-PECVD)分别对薄膜沉积参数进行了功率密度—沉积气压和硅烷浓度—气体总流量两因素优化。主要研究沉积参数对薄膜沉积速率和结晶状况的影响,结果表明:高沉积压强下,功率密度的提高对微晶硅薄膜(μc-Si∶H)沉积速率的影响减弱,硅烷浓度和气体总流量影响作用相对增强,高硅烷浓度有利于材料的利用,最终在高压强(600Pa)条件下,使微晶硅薄膜的沉积速率提升到2.1nm.s-1。同时,利用分步沉积法对薄膜的纵向结构均匀性进行了初步研究。The hydrogenated microcrystalline silicon（μc-Si： H） films were grown by very high frequency, plasma enhanced chemical vapor deposition（VHF-PECVD） on glass slide substrates. The influence of the film growth conditions on the deposition rate and inicrostructures was studied; and the films were characterized Raman spectroscopy. The results show that the power density and silane concentration in the total gas flow rate affect the deposition rate to different degrees. For example, at a high pressure, the silane concentration and the total gas flow rate increasingly affect the deposition rate, whereas the impact of the power density decreases; and high silane concentration favors better utilization of raw materials. At 600Pa, the deposition rate of μ c-Si： H films can be 2. 1nm/s. The effect of the step-by-step deposition on the uniformity of the films was also tentatively studied.

关 键 词：μc-Si∶H VHF-PECVD 生长速率 晶化率 孵化层 分步沉积 

分 类 号：O484[理学—固体物理] TB43[理学—物理]