激光/微波光电导衰减技术研究半绝缘GaAs复合寿命的分布  

Study on Recombination Lifetime Distribution of SI GaAs by Laser/Microwave Photoconductance Decay Technique

作　　者：屠海令[1] 张峰翊[1] 王永鸿[1] 钱嘉裕[1] 马碧春[1] 

机构地区：[1]北京有色金属研究总院

出　　处：《稀有金属》1998年第6期450-451,共2页Chinese Journal of Rare Metals

摘　　要：采用非接触式激光／微波光电导衰减技术（ＬＭＰＣＤ）对Φ５０．８ｍｍ双面抛光的半绝缘ＧａＡｓ晶片的复合寿命进行了无损伤检测，得到了有效载流子寿命沿晶片直径的径向分布曲线。结果表明，复合寿命为几百纳秒，在径向呈“Ｍ”型分布，和半绝缘ＧａＡｓ晶片中ＥＰＤ的“Ｗ”型分布相反。在考虑了位错密度和掺杂浓度对寿命的影响的基础上，对ＧａＡｓ晶片的寿命进行了讨论。The non destructive contactless measurement of lifetime in Φ 50.8 mm SI GaAs wafers was carried out by laser/microwave photoconductance decay technology (LM PCD) and the effective carrier lifetime distribution across the wafer was obtained. The results show that the lifetime is several hundred ns and its distribution is “W” shape, contrary to the EPD distribution of “M” shape. The lifetime in GaAs wafers was also discussed by taking dislocation density and dopant concentration into account.

关 键 词：复合寿命 半绝缘 砷化镓 LM-PCD 

分 类 号：TN304.23[电子电信—物理电子学]