PZT薄膜微图形的制作精度的研究  

Study on Fabrication Precision of PZT Thin Film Micro Pattem

作　　者：刘秦[1] 林殷茵[1] 吴小清[1] 张良莹[1] 姚熹[1] 

机构地区：[1]西安交通大学电子材料研究所

出　　处：《压电与声光》1998年第6期411-413,共3页Piezoelectrics & Acoustooptics

基　　金：国家自然科学基金

摘　　要：采用典型的半导体光刻工艺用ＢＨＦ／ＨＮＯ３溶液成功地刻蚀了ＰＺＴ（５２／４８）薄膜。研究了薄膜的微观结构对微图形的制作精度的影响。结果表明，在薄膜中晶粒团聚区域和周围区域的刻蚀速率存在着差异，晶粒小的薄膜有利于获得高保真的从掩膜到薄膜的图形转移，晶粒团聚区域的尺寸基本决定了图形转移的误差。PZT (52/48)thin film was chemically etched using BHF/HNO 3 solution through typical semiconductor lithographic process. The effect of microstructure of PZT thin film on the precision of micropattern fabrication was studied.It was revealed that the eching rates differed between the islands of grains and surrounding areas within the film. The film with small grains was favored for pattern transfer of fidelity. The dimension of the islands of grains contributed greatly to the error of patterned features.

关 键 词：锆钛酸铅 薄膜 刻蚀 微观结构 PZT 

分 类 号：TM223.03[一般工业技术—材料科学与工程] O484.1[电气工程—电工理论与新技术]