非平衡状态中半导体方程解的一致有界性  

Uniform Boundedness of the Unequilibrium Solutions of the Steady State Semiconductor Device Equations

作　　者：许立炜[1] 

机构地区：[1]南京邮电学院基础课部

出　　处：《南京邮电学院学报》1998年第4期90-94,共5页Journal of Nanjing University of Posts and Telecommunications(Natural Science)

摘　　要：研究了Ｎ维空间中的稳态半导体方程，把Ｊ．Ｈｅｎｒｙ提出的有关解的一致有界性的结论，推广到了非平衡状态下（Ｒ≠０）且具有混合边界条件的半导体模型。In N dimensional case,the steady state semiconductor device equations are considered when R≠0 in this paper. The conclusions about uniform boundedness of the solutions obtained by J.Henry are extended to the case of unequilibrium semiconductor device with mixed boundary conditions.

关 键 词：半导体物理学 一致有界性 函数空间 非平衡状态 

分 类 号：TN301[电子电信—物理电子学] O471[理学—半导体物理]