大直径LEC Si-GaAs中深施主缺陷的红外光谱分析  

Infrared spectroscopy analysis of deep donor defect in large diameter LEC Si-GaAs

作　　者：孙卫忠[1] 王娜[1] 王丽华[1] 郝秋艳[1] 刘彩池[1] 

机构地区：[1]河北工业大学信息功能材料研究所,天津300130

出　　处：《现代仪器》2009年第5期41-42,50,共3页Modern Instruments

基　　金：河北省自然科学基金(08B013);河北省科学技术研究与发展指导计划(07215138)

摘　　要：本文利用红外光谱分析技术系统分析大直径LEC (Light Energy Converter光能转换器)Si-GaAs中深施主缺陷EL2的浓度分布。实验结果表明,大直径LEC Si-GaAs深施主缺陷EL2浓度沿直径方向成w型分布,中心区域比较高,靠近中间区域最低,边缘区域最高。EL2是GaAs晶体中过量As存在的一种形式,其浓度强烈依赖过量As的浓度。晶体生长后的冷却过程中热应变场对过量As的分布会造成一定影响,同时位错密度的分布也会影响过量砷的分布,也就影响深施主缺陷EL2浓度的分布。In this paper, the concentration distribution of deep donor defect EL2 in large diameter LEC Si-GaAs has been analysed by Infrared Spectroscopy analysis. The results shows that the distribution of deep donor defect EL2 concentration are W-shape along the diameter. As a existent form of excessive As in GaAs crystal, the concentration of EL2 strongly dependents on the concentration of excess As, which can be affected to a certain degree by the hot strain field in the cooling process of Crystal Growth. At the same time, the distribution of dislocation density will affect the distribution of excess arsenic, so that the distribution of EL2 also can be impacted by the distribution of dislocation density.

关 键 词：半绝缘砷化镓 EL2 红外光谱分析 

分 类 号：TN304.23[电子电信—物理电子学] TN386