检索规则说明:AND代表“并且”;OR代表“或者”;NOT代表“不包含”;(注意必须大写,运算符两边需空一格)
检 索 范 例 :范例一: (K=图书馆学 OR K=情报学) AND A=范并思 范例二:J=计算机应用与软件 AND (U=C++ OR U=Basic) NOT M=Visual
作 者:李宏[1] 章钊[1] 王倩[1] 杜芸[1] 程金树[1]
机构地区:[1]武汉理工大学,硅酸盐材料工程教育部重点实验室,武汉430070
出 处:《硅酸盐学报》2009年第10期1735-1739,共5页Journal of The Chinese Ceramic Society
基 金:国家自然科学基金(50472039);湖北省自然科学基金(2005ABA011)资助项目
摘 要:采用合适的组分和二步热处理法制备了热膨胀系数与硅片匹配的Li2O-Al2O3-SiO2(LAS)微晶玻璃,并在满足键合所要求的热膨胀系数的基础上,通过调节成分和控制热处理制度,研究了微晶玻璃的导电和介电性能。结果表明:采用不同的热处理制度进行晶化处理,LAS微晶玻璃的主晶相均为β-锂辉石;607℃核化、980℃晶化时间均为3h样品的热膨胀系数为31.16×10-7℃-1(200~400℃),与硅片热膨胀系数较接近;微晶玻璃的电阻率大于基础玻璃,且随温度的升高电阻率呈下降趋势;改变核化和晶化时间,在150~360℃范围内其电阻率变化不大;微晶玻璃的介电常数和介电损耗均小于基础玻璃,更适宜作为电子器件的绝缘封装材料。Some typical Li2O-Al2O3-SiO2(LAS) glass-ceramics were prepared by the two-step heat-treatment method;the coefficient of thermal expansion(CTE) of the glass-ceramics could be matched well with silicon.To reduce the bonding voltage and dielectric loss of micro-electronic devices,the electrical properties of glass-ceramics were studied.The results show that with different heat-treatment schedules,the main crystal phase of the glass-ceramics is β-spodumenes.The CTE of the samples nuclated at 607 ℃ for 3 h and crystallized at 980 ℃ for 3 h is about 31.16 × 10-7 ℃-1(200-400 ℃),similar to that of silicon.The resistivity of the glass-ceramic is higher than that of base glass,and decreases with the increase of temperature.The time of crystallization and nuclea-tion has little influence on the resistivity of glass-ceramics at 150-360 ℃.The dielectric constant and dielectric loss of glass-ceramics are lower than that of base glass,so glass-ceramics are more suitable for electronic devices as pack ing materials.
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在链接到云南高校图书馆文献保障联盟下载...
云南高校图书馆联盟文献共享服务平台 版权所有©
您的IP:18.221.242.128