1.3μm InGaAsP/InP应变多量子阱部分增益耦合DFB激光器  

1 3μm InGaAsP/InP Strained MQW Complex Coupled DFB Lasers

作　　者：陈博[1,2] 王圩[1,2] 张静媛[1,2] 汪孝杰[1,2] 周帆[1,2] 朱洪亮[1,2] 边静[1,2] 马朝华[1,2] 

机构地区：[1]国家光电子工艺中心 [2]中国科学院半导体研究所

出　　处：《Journal of Semiconductors》1998年第10期793-797,共5页半导体学报（英文版）

摘　　要：本文在国内首次报道了采用直接刻蚀有源区技术在应变多量子阱有源区结构基础上制作了１．３μｍＩｎＧａＡｓＰ／ＩｎＰ部分增益耦合ＤＦＢ激光器，器件采用全ＭＯＶＰＥ生长，阈值电流１０ｍＡ，边模抑制比（ＳＭＳＲ）大于３５ｄＢ。Abstract μm InGaAsP/InP strained Multi Quantum Well DFB Lasers with complex coupled grating formed by etching through the top 3￣4 QWs of active region are reported. The laser structure is grown by all MOVPE and subsequently processed into PBH LD devices. The threshold current is 10mA. The Side Mode Suppression Ratio (SMSR) is more than 35dB. The 70% of uncoating devices are lased in single longitudinal mode.

关 键 词：DFB激光器 增益耦合 应变多量子阱 

分 类 号：TN248.4[电子电信—物理电子学] TN304.01