多晶硅导电材料的1/f噪声模型研究  

Study of the Model of 1/f Noise in Poly-Si Conductive Materials

作　　者：张天福[1] 杜磊[1] 何亮[1] 陈伟华[1] 赵鸿飞[1] 

机构地区：[1]西安电子科技大学技术物理学院,陕西西安710071

出　　处：《电子科技》2009年第11期88-91,共4页Electronic Science and Technology

基　　金：国家部委"十一五"预研基金资助项目(51312060104);西安应用材料创新基金资助项目(XA-AM-200603)

摘　　要：在多晶硅导电材料的1/f噪声迁移率涨落、载流子数涨落机制和模型的基础上,修正了基于迁移率涨落机制的噪声模型。通过分析材料中载流子输运的实际物理过程,论证了产生1/f噪声的两种机制同时存在于多晶硅材料中,提出建立多晶硅导电材料1/f噪声双机制不同掺杂浓度统一模型的思路。Based on the mobility fluctuation and carrier number fluctuation mechanisms and 1/f noise models of poly-Si conductive materials,the noise model of mobility fluctuation is revised.By analyzing the actual physical process of carrier transport in materials,we demonstrate that both mechanisms exist in poly-Si conductive materials,and propose a method for developing a unified 1/f noise model of poly-Si conductive materials with double mechanisms and different dopant concentrations.

关 键 词：多晶硅 1/f噪声 迁移率涨落 载流子数涨落 

分 类 号：TN304.1[电子电信—物理电子学]