Bi_(2.1)Ca_ySr_(1.9-y)CuO_(6+δ)薄膜制备及性能  

The Fabrication and Properties of Bi_(2.1)Ca_ySr_(1.9-y)CuO_(6+δ) Thin Films

作　　者：张炳森[1] 孙霞光[1] 李茂林[1] 于晓明[1] 张彩碚[1] 祁阳[1] 

机构地区：[1]东北大学材料各向异性与织构教育部重点实验室,辽宁沈阳110004

出　　处：《稀有金属材料与工程》2008年第A04期133-136,共4页Rare Metal Materials and Engineering

基　　金：国家自然科学基金(50572013)资助

摘　　要：利用分子束外延法在MgO(100)衬底上制备Bi2.1CaySr1.9-yCuO6+δ薄膜。薄膜的结构、外延性、化学计量比及表面形貌通过X射线衍射仪、X射线能谱仪及扫描电子显微镜表征,薄膜的R-T曲线通过标准四引线法测量。结果表明,Bi2.1CaySr1.9-yCuO6+δ薄膜具有较好的结晶性能,沿衬底[001]方向c轴外延生长,且表面平整;随Ca含量(0.2≤y≤1.0)不同,Bi2.1CaySr1.9-yCuO6+δ相的c轴长度发生变化,且薄膜显现不同的导电特性。The Bi2.1CaySr1.9-yCuO6＋δ thin films with c-axis oriented epitaxial were deposited on MgO （100） substrates by moleculor beam epitaxy （MBE） method. The film properties of structure, composition and surface morphology were investigated by X-ray diffraction （XRD）, X-ray energy dispersive spectrometry （EDS） and scanning electron microscopy （SEM）, respectively. Temperature dependence of resistance （R-T） was measured by the standard four-probe method. It demonstrates that the Bi2.1CaySr1.9-yCuO6＋δ thin films are fabricated owning a good crystalline quality, c-axis epitaxial growth and smooth surface. The c-axis length of Bi2.1CaySr1.9-yCuO6＋δ phase and the conductibility of thin films are varied with Ca doping （0.2≤y≤1.0）.

关 键 词：Bi系氧化物薄膜 超导 分子束外延 

分 类 号：TM26[一般工业技术—材料科学与工程]