3D封装与硅通孔(TSV)工艺技术  

Technology of 3D Packaging and TSV

作　　者：郎鹏[1] 高志方[1] 牛艳红[1] 

机构地区：[1]太原风华信息装备股份有限公司,山西太原030024

出　　处：《电子工艺技术》2009年第6期323-326,共4页Electronics Process Technology

摘　　要：在IC制造技术受到物理极限挑战的今天,3D封装技术越来越成为了微电子行业关注的热点。对3D封装技术结构特点、主流多层基板技术分类及其常见键合技术的发展作了论述,对过去几年国际上硅通孔(TSV)技术发展动态给与了重点的关注。尤其就硅通孔关键工艺技术如硅片减薄技术、通孔制造技术和键合技术等做了较详细介绍。同时展望了在强大需求牵引下2015年前后国际硅通孔技术进步的蓝图。IC manufacturing faced the challenges of physical limits ,3D packaging technology has in- creasingly become the focus of the microelectronics industry. Dissertate the structure and characteristics of 3D packaging technology, mainstream multi - layer substrate technology classification, and the development of common bonding technologies. Pay attention to the international development of TSV technology over the past few years, Especially, TSV key technologies, such as wafer thinning technology, through - hole manufacturing technology and bonding technology. Give out the TSV technology development trend with the strong demands around 2015.

关 键 词：3D封装 硅通孔 IC制造 

分 类 号：TN605[电子电信—电路与系统]