磁控溅射薄膜生长全过程的计算机模拟研究  

Simulation of Complete Film Growth Process by Magnetron Sputtering

作　　者：戴传玮[1] 顾昌鑫[1] 孙琦[1] 单莉英[1] 

机构地区：[1]复旦大学材料科学系,上海200433

出　　处：《真空科学与技术学报》2009年第6期586-592,共7页Chinese Journal of Vacuum Science and Technology

摘　　要：本文通过建立多尺度模型,结合模拟了磁控溅射中溅射原子的产生、溅射原子的碰撞传输、以及最终成膜的全过程,研究了基板温度、溅射速率、磁场分布和靶材-基板间距对薄膜生长过程与薄膜性能的影响。模拟结果显示,提高基板温度或降低溅射速率都会增加初期生长阶段薄膜的相对密度;磁场对靶的利用率有显著的影响,而对薄膜最终形貌的影响不大;增大靶材-基板间距会降低薄膜的粗糙度。The various aspects of the complete films growth process, including generation of the sputtered atoms, its collision and scattering, its deposition, formation of clusters, and film growth, were simulated with the newly-developed multi-scale model, by a combination of particle-in-cells （PIC）, Monte Carlo and clouds-in-cell （CIC） methods. The impacts of film growth conditions, such as the substrate temperature, deposition rate, magnetic field distributions, and separation between target and substrate, on film growth and properties were analytically studied. The simulated results show that the substrate temperature and the deposition rate strongly affect the initial stage of the film growth. For example, higher temperature and lower deposition rate results in denser and more compact films. Large target-substrate distance reduces the surfaces roughness;and the magnetic field distribution significantly influenccs target utilization rate, but has little effect on the final film topagraphy.

关 键 词：磁控溅射 薄膜生长 多尺度模拟 

分 类 号：TB43[一般工业技术]