牺牲层结构压力传感器技术  

Pressure sensor technology for sacrifice layer structure

作　　者：揣荣岩[1] 郑雁公[1] 刘本伟[1] 王文东[2] 崔林[1] 李新[1] 

机构地区：[1]沈阳工业大学信息科学与工程学院,沈阳110870 [2]中国石油天然气集团公司辽河油田欢喜岭采油厂,辽宁盘锦124114

出　　处：《沈阳工业大学学报》2009年第5期587-590,共4页Journal of Shenyang University of Technology

基　　金：国家自然科学基金资助项目(60776049);辽宁省科学技术基金资助项目(20072036);辽宁省教育厅创新团队项目(2007T130);辽宁省微纳米技术及系统重点实验室;微系统与微制造辽宁省高校重点实验室开放基金资助项目

摘　　要：为使多晶硅纳米薄膜良好的压阻特性在微机电系统压阻传感器中得到有效应用,在设计牺牲层结构压力传感器芯片中探索性地采用多晶硅纳米薄膜作为应变电阻,并对这种传感器的工艺方法进行了研究.通过对牺牲层材料及结构的分析,给出了传感器的工艺流程,指出其中存在的工艺难点并给出了解决方法.利用牺牲层技术和多晶硅纳米薄膜制做压阻传感器,不但可以提高传感器的灵敏度,还可改善温度特性,而且可与集成电路工艺相兼容.In order to effectively apply the polysilicon nanofilm with excellent piezoresistive properties in MEMS piezoresistive sensors, the polysilicon nanofilm was exploringly used as the strain resistors in the design of the pressure sensor chip for the sacrifice layer structure. And the manufacture technology of the sensor was studied. Through analyzing the material and structure of the sacrificial layer, the process flow of the sensor was given, and the methods to solve the technological difficultis were proposed. To manufacture the piezoresistive sensor with the polysilicon nanofilm and sacrifice layer technique can not only enhance the sensitivity of the sensor, but also improve the temperature characteristics of the piezoresistive sensor. Furthermore, the technology is compatible with the integrated circuit one.

关 键 词：压力传感器 牺牲层 灵敏度 工艺设计 化学气相淀积 多晶硅 纳米薄膜 密封腔 

分 类 号：TN61[电子电信—电路与系统] TN65