阳极键合后基片呈现黑斑原因及影响因素  

Reasons and Influencing Factors of Dark Region on the Bongding Substrate

作　　者：李宏[1] 章钊[1] 王倩[1] 熊德华[1] 

机构地区：[1]武汉理工大学硅酸盐材料工程教育部重点实验室,武汉430070

出　　处：《武汉理工大学学报》2009年第22期66-70,共5页Journal of Wuhan University of Technology

基　　金：国家自然科学基金(50472039);湖北省自然科学基金(2005ABA011)

摘　　要：半导体硅与玻璃的阳极键合技术是微机电系统(Micro Electronic Mechanical System简称MEMS)的关键封装技术,微晶玻璃相比传统的阳极键合用玻璃,具有键合温度低、键合强度高、键合质量好等优点。实验采用二步热处理法,制备了热膨胀系数与硅片匹配的Li2O-Al2O3-SiO2(LAS)系统微晶玻璃,在不同的键合工艺制度下,进行了微晶玻璃/硅片阳极键合实验;深入研究了键合后微晶玻璃基片接阴极面均产生黑斑的原因,并分析探讨了黑斑产生的影响因素。实验结果表明:黑斑密集程度随电压的升高而增大,温度对其影响较小,其成因可能为局部温度过高所致。Anodic bonding technology of semiconductor silicon and glass is a key technology of micro electronic mechanical system （MEMS）, compared with conventional horosilicate glass, glass-ceramics could be bonded with silicon at a lower temperature and a higher bonding strength can be got. In this paper,Li2O-Al2O3-SiO2（LAS） glass-ceramics are prepared by two-step heat treatment method, anodic bonding experiments are carried though at different technological parameters. The results show that dark region is found on the surface of glass - ceramics connected with cathode side after anodic bonding. The influential factor of dark region concentration is researched; mechanism of dark region is analyzed. The results show the concentration of dark region increases with the voltage applied, the temperature has little influence on it; the dark region may be caused by high local temperature.

关 键 词：阳极键合 硅片 微晶玻璃 黑斑 

分 类 号：TQ171[化学工程—玻璃工业]