衬底H等离子体预处理时间对微晶硅薄膜生长的影响  

Effects of hydrogen plasma pretreatment of substrate on the growth of microcrystalline silicon film

作　　者：丁艳丽[1] 朱志立[1] 谷锦华[1] 王志勇[1] 申陈海[1] 杨仕娥[1] 卢景霄[1] 

机构地区：[1]郑州大学物理工程学院材料物理教育部重点实验室,河南郑州450052

出　　处：《真空》2009年第6期59-62,共4页Vacuum

基　　金：国家重点研究发展规划项目(2006CB202601);河南省自然科学基金(82300443203)

摘　　要：本文采用VHF-PECVD技术制备了系列硅薄膜,通过椭圆偏振技术及拉曼测试手段研究了衬底表面预处理时间对微晶硅薄膜的微结构及其生长的影响。实验结果表明:随衬底预处理时间(0~10min)的延长,薄膜的晶化率从14%提高到44%;薄膜表面的硅团簇尺寸减小,在衬底预处理10min时,薄膜表面的粗糙度较小。在衬底未预处理与预处理10min时,在相同的沉积参数下,沉积两系列不同生长阶段硅薄膜的生长指数接近。原因是H等离子体预处理使衬底表面的原子氢增多,有利于成膜先驱物在衬底表面的迁移,影响薄膜的初期成核,使薄膜易于晶化。The effect of pretreaing time for substrate surface with H2 plasma on the microstructure and growth of μc-Si：H thin films by VHF-PECVD was investigated experimentally using SEM, Raman spectra and SE（spectroscopic ellipsometry）. The results showed that the Si cluster size decreases and the crystallization rate increases with lengthening H2-plasma pretreating time, ie., when the pretreating time increases from 0 to 10min, the c^stallization rate increases from 14% to 44% with film surface roughness reduced. For the thin films of which the substrate were pretreated for 10rain and without pretreatment, the growth index 13 is similar under conditions of the same deposition parameters. The reason is that the H2 plasma pretreatment increases H atoms on substrate surface so as to benefit the film precursor migration on substrate surface and affect the initial nucleation of thin fihns to make them easy to be crystallized.

关 键 词：微晶硅薄膜 晶化率 生长指数 表面粗糙度 

分 类 号：O781[理学—晶体学] TB43[一般工业技术]