SiC缓冲层对Si表面生长的ZnO薄膜结构和光电性能的改善  

Improvement of the Structure and Photoelectrical Properties of ZnO Films Based on SiC Buffer Layer Grown on Si(111)

作　　者：康朝阳[1] 赵朝阳[1] 刘峥嵘[2] 孙柏[3] 唐军[1] 徐彭寿[1] 谢家纯[2] 

机构地区：[1]中国科学技术大学国家同步辐射实验室,安徽合肥230029 [2]中国科学技术大学物理系,安徽合肥230026 [3]中国科学院合肥智能机械研究所,安徽合肥230031

出　　处：《发光学报》2009年第6期807-811,共5页Chinese Journal of Luminescence

基　　金：国家自然科学基金(50532070)资助项目

摘　　要：用脉冲激光沉积(PLD)技术制备了ZnO/SiC/Si和ZnO/Si薄膜并制成了紫外探测器。利用X射线衍射(XRD),光致发光(PL)谱,I-V曲线和光电响应谱对薄膜的结构和光电性能进行了研究。实验结果表明:SiC缓冲层改善了ZnO薄膜的结晶质量和光电性能,其原因可能是SiC作为柔性衬底能够减少ZnO与Si之间大的晶格失配和热失配导致的界面缺陷和界面态。The films of ZnO/SiC/Si and ZnO/Si were grown by pulsed-laser-deposition （PLD） technique and were processed to fabricate ultraviolet （UV） detectors. The effects of SiC buffer layer on the structure and photoelectrical properties of ZnO films grown on Si （ 111 ） substrates were investigated by the X-ray diffraction （XRD）, photoluminescence （PL）, current-voltage （l-V） and photoelectrical response measurements. The results showed that the SiC buffer layer can effectively improve the crystalline qualities, optical and photoelectrical properties of the ZnO thin film grown on Si substrate. It is obvious that, as a compliant substrate, SiC buffer layer makes the interface defects and interface state density reduce because the partial stress induced by large crystal lattice mismatch and thermal mismatch between ZnO and SiC can be relaxed.

关 键 词：ZNO薄膜 SI(111)衬底 SiC缓冲层 光电性能 

分 类 号：O472[理学—半导体物理] O482.31[理学—物理]