10位双极数模转换器的电离辐射效应  

Ionizing Radiation Effect of a 10-bit Bipolar D/A Converter

作　　者：王义元[1,2] 陆妩[1] 任迪远[1] 郑玉展[1,2] 高博[1,2] 李鹏伟[1,2] 于跃[1,2] 

机构地区：[1]中国科学院新疆理化技术研究所,乌鲁木齐830011 [2]中国科学院研究生院,北京100049

出　　处：《固体电子学研究与进展》2009年第4期551-555,共5页Research & Progress of SSE

摘　　要：研究了国产互补双极工艺生产的数模转换器(D/A转换器)在不同偏置和不同剂量率条件下的电离辐射效应及退火特性。研究结果表明:D/A转换器对偏置条件和辐照剂量率都很敏感。大剂量率辐照时,电路功能正常,各功能参数变化较小;而在低剂量率辐照情况下,各参数变化显著,超出器件允许范围,器件功能失效。因此,D/A转换器表现出明显的低剂量率辐射损伤增强效应(ELDRS)。零偏时,D/A转换器功能参数损伤变化更加严重。最后,结合边缘电场效应和空间电荷模型对这种不同偏置和剂量率条件下的损伤机理进行了初步的探讨。Radiation effects and annealing characteristics of a bipolar current steering D/A converter have been investigated in different biases and dose-rates. The response of the D/A converter is sensitive to both the biases and dose-rates. During high dose-rate irradiation, the D/A converter works well. But under low dose-rate condition, the parameters of the D/A converter change obviously in low total dose, and is more significant at zero bias. Combining the fringing field with the space charge model, the damage mechanism for this response has being discussed.

关 键 词：双极数模转换器 ^60Co辐照 低剂量率辐射损伤增强效应 偏置条件 

分 类 号：TN431[电子电信—微电子学与固体电子学] O571.33[理学—粒子物理与原子核物理]