SiGe HBT器件的研究设计  

Design and Study of SiGe HBT Device

作　　者：米保良[1] 吴国增[1] 

机构地区：[1]聊城大学东昌学院,山东聊城252000

出　　处：《半导体技术》2010年第1期58-62,共5页Semiconductor Technology

摘　　要：研制了一种平面集成多晶发射极SiGe HBT,并对SiGe HBT设计进行了研究分析。给出了双极晶体管的结构和关键工艺参数,并进行了流片测试,结果表明,在室温下电流增益β大于1500,最大达到3000,Vceo为5V,厄利电压VA大于10V,βVA乘积达到15000以上。这种器件对多晶Si发射极As杂质浓度分布十分敏感。A planar integrated emitter polycrystalline silicon-germanium heterojunction bipolar transistor was developed. The design of SiC, e HBT was carried out and analyzed. The bipolar transistor structure and key process parameters were studied and analyzed, and finally the tape out was tested. The results show that at room temperature current gain β is greater than 1 500, and the greatest is up to 3 000, Vceo is 5 V,Overly-voltage VA is greater than 10 V, βVA product reaches more than 15 000. This device is very sensitive to the arsenic impurity concentration distribution of polysilicon emitter.

关 键 词：锗硅异质结双极晶体管 多晶发射极 特征频率 双层多晶硅 

分 类 号：TN322.8[电子电信—物理电子学]