硼掺杂对钛基金刚石薄膜附着力的影响  

Effect of doped boron on the adhesion of diamond film on titanium substrate

作　　者：魏俊俊[1] 贺琦[1] 高旭辉[1] 吕反修[1] 

机构地区：[1]北京科技大学材料科学与工程学院,北京100083

出　　处：《材料热处理学报》2009年第6期140-143,共4页Transactions of Materials and Heat Treatment

摘　　要：采用微波等离子体化学气相沉积(MPCVD)技术在钛基片上沉积了掺硼金刚石薄膜,并对掺杂前后的薄膜形貌及结构进行了检测。结果表明掺杂元素对形貌和结构有很大的影响,同时掺杂后薄膜与基底附着力有所下降。掠角衍射(GIXD)检测表明,中间层的主要成分是TiC和TiH2。随着硼的加入,两者的含量增加。薄膜与基底的附着力下降的原因主要是受中间过渡层成分和残余应力增加的共同影响。Boron doped diamond film（BDD） on Ti substrate was synthesized by microwave plasma assisted chemical vapor deposition（CVD） and characterized by SEM and Raman spectroscopy.The morphology and structure of boron doped films differed from the undoped film.The interface layer between the BDD films and titanium substrate was mainly composed of TiC and TiH2,and the content of TiC and TiH2 was increased with the boron doping.The adhesion of the films to substrate was weakened after the boron doping and mainly affected by the structure of interface layer and the internal stress.

关 键 词：金刚石薄膜 掠角衍射(GIXD) 掺硼 附着力 CVD 

分 类 号：TB383[一般工业技术—材料科学与工程] TQ164[化学工程—高温制品工业]