应用LP-MOCVD方法研制InGaAs/InP应变量子阱LD  

InGaAs/InP Strained Quantum Well LD by LP-MOCVD

作　　者：黄钟英[1] 刘宝林[1] 

机构地区：[1]厦门大学物理学系

出　　处：《沈阳航空工业学院学报》1998年第3期40-44,共5页Journal of Shenyang Institute of Aeronautical Engineering

摘　　要：（在CP—MOCVD生长过程中）本文研究生长温度和生长过程对PN结结位的影响，并用它来控制InGaAs／InP量子阶激光器的p－n结结位，还探讨了在InP材料中使用DEZn和H2S做掺杂源时P型和N型的杂质浓度和PN结控制的条件，得出在0.5％压缩条件下有源区阶层InGaAs和InP的应变量子层激光器。用这一LD结构实现室温脉冲激射时，我们可获得峰值功率为106mW以上、阈值电流密度为2.6kA／cm2的应变三量子阱激光器。The using of differential growth temperature of InGaAs/InP Quantum Well (QW) area and InP upper confining layer, and growth of unintentionally doped InP layer were proposed to control p - n junction opition by low - pressure Metal Organic Chemical Vapor Deposition (LP - MOCVD). The p - type and n - type doping source were DEZn and H2S. InGaAs/InP three strained larer QW LD's was fabricated. The LD was pulsed lasered lasered at un temperature. The pulsed output peak power is greater than 106 mW,and the pulsed threshold current density is 2. 6kA/cm2.

关 键 词：LP-MOCVD 应变 量子阱 激光器 铟镓砷 磷化铟 

分 类 号：TN248.4[电子电信—物理电子学]