金属有机化学气相淀积技术制备GaMnN薄膜材料光学性质研究  

Optical properties of GaMnN films grown by metal-organic chemical vapor deposition

作　　者：邢海英[1,2] 范广涵[2] 杨学林[3] 张国义[3] 

机构地区：[1]天津工业大学信息与通信工程学院,天津300160 [2]华南师范大学光电子材料与技术研究所,广州510631 [3]北京大学宽禁带半导体研究中心,北京100871

出　　处：《物理学报》2010年第1期504-507,共4页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:50602018);广东省自然科学基金(批准号:06025083);广东省科技攻关计划(批准号:2006A10802001);广州市科技攻关重大项目(批准号:2005Z12D0071);粤港关键领域重点突破项目(批准号:207A01501008)资助的课题~~

摘　　要：研究由MOCVD技术制备的GaMnN外延薄膜光吸收谱.实验发现Mn掺杂后较未掺杂GaN吸收系数在近紫外区增加,在吸收谱低能区1.44eV附近观察到吸收峰,吸收系数随Mn浓度的增加而增大.实验结果与基于密度泛函理论的第一性原理计算结果一致,结合理论计算分析认为1.44eV附近的吸收峰源于Mn3+离子e态与t2态间的带内跃迁5T2→5E.Optical absorption spectra for a series of GaMnN samples with different Mn content grown by metal-organic chemical vapor deposition have been investigated. Compared with GaN, the absorption coefficient of Ga1-x Mnx N increases in the UV region and an absorption peak can be observed near 1.44 eV. In addition, the absorption coefficient increases with the increase of the Mn content. The experimental results are in excellent agreement with theoretical data based on density functional theory. Associated with theoretical data, the absorption peak near 1.44 eV is assigned to s ^5T2→^5E internal transition between the e state and the t2 state of Mn^3＋ ion.

关 键 词：GAMNN MOCVD 密度泛函理论 光学性质 

分 类 号：O484.41[理学—固体物理] TN304.055[理学—物理]