高压LDMOS晶体管准饱和效应分析与建模  

Analysis and modeling of quasi-saturation effect in high-voltage LDMOS transistors

作　　者：王磊[1,2] 杨华岳 

机构地区：[1]中国科学院上海微系统与信息技术研究所,上海200050 [2]中国科学院研究生院,北京100049 [3]上海宏力半导体制造有限公司,上海201203

出　　处：《物理学报》2010年第1期571-578,共8页Acta Physica Sinica

摘　　要：研究了高压LDMOS(lateral double-diffused MOS)晶体管中一种特殊的电流饱和现象——准饱和效应.借助于TCAD模拟工具,澄清了准饱和效应的物理机理是漂移区载流子的速度饱和.进而从本征漏极电压Vk入手,给出了描述LDMOS管电流饱和特性的数学模型.该模型已经通过了Matlab的编程验证,兼具准确性、计算速度和可扩展性等优点,并可进一步应用于SPICE电路模拟.This paper investigates a specific current saturation phenomenon in high-vohage LDMOS （lateral double-diffused MOS） transistors, i.e., the quasi-saturation effect. By means of simulation tool TCAD, we clarified that the physical mechanism of quasi-saturation effect is the carrier velocity saturation in the drift region. Further more, with the concept of intrinsic drain voltage Vk, a mathematical model is derived to describe the current saturation effect in LDMOS transistors. The proposed model has been primarily validated by Matlab program and exhibites excellent accuracy, speed and scalability. This model can be further implemented in SPICE circuit simulation.

关 键 词：LDMOS 准饱和效应 高压 

分 类 号：TN386.1[电子电信—物理电子学]