利用UV曝光技术研制单根定向碳纳米管阵列冷阴极  

Development of Cold Cathode Arays of Single Carbon Nanotubes using Ultraviolet Lithography Method

作　　者：陈长青[1] 丁明清[1] 李兴辉[1] 白国栋[1] 张甫权[1] 冯进军[1] 

机构地区：[1]北京真空电子技术研究所大功率微波电真空器件技术国防科技重点实验室,北京100016

出　　处：《真空科学与技术学报》2010年第1期1-5,共5页Chinese Journal of Vacuum Science and Technology

基　　金：大功率微波电真空器件技术国防科技重点实验室的资助.

摘　　要：通过普通的紫外（UV）光刻工艺，结合“变倾角缩口”新技术，研制了不同发射单元尺寸的碳纳米管（CNTs）阵列阴极。扫瞄电镜分析表明，随着缩口尺寸的依次减小（从0．6μm到0．4μm，最后到0．2μm），发射单元内CNTs的根数也不断减少。当孔径缩至0．2μm时，发射单元仅由1根～3根CNTs组成，并且大部分单元顶端均有单根CNT伸出，使得整个发射体近似于单根CNT。场发射特性测试结果表明，0．2μm发射单元尺寸的阵列阴极，开启电场约2V·μm-1；当场强为20V·μm-1时，该阵列的电流密度达到0．35A·cm-2，比1μm尺寸的阵列阴极提高了近4倍，比连续生长的薄膜CNTs阴极则高1～2个数量级。Four types of arrays of single carbon nanotubes （CNTs）,with field emitter diameters of 1μm ,0.6μm, 0.4μm and 0.2μm, were fabricated, respectively, by combining conventional ultraviolet （UV） lithography and the recently-developed technique of ＂aperture reduction via varying glancing angle＂. The scanning electron microscopy images show that the number of CNTs in each emitter decreases with an reduction of the aperture size. For the arrays fabricated with the 0.2μm aperture,only 1 - 3CNTs were observed in each unit cell,while most emitters exhibit single ones, in addition, its onset field lowers to 2V·μm- 1 ; and at a field of 20V·μm-1, its emission current density reaches 0.35A· cm- 2,4 times higher than that of the 1.0μm CNTs emitter array and 1 to 2 order of magnitudes higher than that of the densely packed CNTs films.

关 键 词：UV光刻技术 变倾角缩口 定向碳纳米管的生长 场发射阵列冷阴极 

分 类 号：O462.4[理学—电子物理学]