p型GaN低温粗化提高发光二极管特性  

Improved properties of light emitting diode by rough p-GaN grown at lower temperature

作　　者：邢艳辉[1] 韩军[1] 邓军[1] 李建军[1] 徐晨[1] 沈光地[1] 

机构地区：[1]北京工业大学电子信息与控制工程学院,北京100124

出　　处：《物理学报》2010年第2期1233-1236,共4页Acta Physica Sinica

基　　金：国家高技术研究发展计划(批准号:2008AA03Z402);北京市自然科学基金(批准号:4092007; 4102003);北京市教育委员会科技发展计划(批准号:KM200810005002);北京工业大学博士科研启动基金(批准号:X0002013200901)资助的课题~~

摘　　要：利用金属有机物化学气相沉积技术在蓝宝石衬底上低温生长GaN:Mg薄膜,对不同源流量的GaN:Mg材料特性进行优化研究.研究表明二茂镁(CP2Mg)和三甲基镓(TMGa)物质的量比([CP2Mg]/[TMGa])在1.4×10-3—2.5×10-3范围内,随[CP2Mg]/[TMGa]增加,晶体质量提高,空穴浓度线性增加.当[CP2Mg]/[TMGa]为2.5×10-3时获得空穴浓度与在较高温度生长获得的空穴浓度相当,且薄膜表面较粗糙.采用[CP2Mg]/[TMGa]为2.5×10-3的p型GaN层制备的发光二极管,在注入电流为20mA时,输出光强提高了17.2%.GaN： Mg films have been grown on sapphire at low temperature by metal-organic chemical vapor deposition, the properties of different source flux GaN： Mg materials were studied. When the molar ratio of CP2Mg and TMGa is between 1.4×10^-3 and 2.5×10^-3, the quality of crystal was improved with the increasing molar ration, and the hole concentration was increased linearly. When the molar ratio is 2.5×10^-3,the concentration is equal to that of the film grown at higher temperature, and the surface morphology is more coarser. Taking the p-GaN layer with molar ratio of CP2Mg and TMGa of 2.5×10^-3 as the light-emitting diode, when the inject current is 20 mA, the output light power was increased by 17.2%.

关 键 词：氮化镓 金属有机物化学气相沉积 原子力显微镜 X射线双晶衍射 

分 类 号：TN312.8[电子电信—物理电子学]