InP/Si键合技术研究进展  

Research Advances in InP/Si Wafer Bonding

作　　者：刘邦武[1] 李超波[1] 李勇涛[1] 夏洋[1] 

机构地区：[1]中国科学院微电子器件与集成技术重点实验室,北京100029

出　　处：《电子工艺技术》2010年第1期12-15,共4页Electronics Process Technology

基　　金：国家自然科学基金(项目编号:No.60727003);中国科学院科研装备研制项目(项目编号:No.YZ200940和No.YZ200755)

摘　　要：InP材料及其器件的研制是近年来研究热点之一,而键合技术又是光电子集成研究领域内一项新的制作工艺。利用键合技术结合离子注入技术可以InP薄膜及器件集成到Si衬底上,改善机械强度,降低成本,具有非常诱人的应用前景。概括地介绍了近年来InP在Si上的键合工艺及层转移技术研究进展,并对InP和Si的几种键合工艺进行了分析。降低InP和Si键合温度,进行低温键合是其发展趋势。比较几种键合技术,利用等离子活化辅助键合是降低键合温度的有效途径。The development of InP material and its devices has attracted much attention in recent years. And wafer bonding technology is an attractive fabrication method, which has the potential for achieving desirable optoelectronic integration. The InP layer can be transferred onto Si substrate by wafer bonding and smart cut, which can improve the strength and reduce the coat. It may also open up a new array of optoelectronic devices. Research advances in InP/Si wafer bonding and layer transfer technology are out- lined. It is of importance to reduce the InP/Si wafer bonding temperature. The most efficient way to reduce the bonding temperature is plasma activated wafer bonding.

关 键 词：SI INP 键合 层转移 

分 类 号：TN405[电子电信—微电子学与固体电子学]