铟掺杂氧化锌纳米线的制备及光致发光特性  

PREPARATION OF In-DOPED ZnO NANOWIRE AND THEIR PHOTOLUMINESCENCE

作　　者：刘炳胜[1] 韩仁学[2] 

机构地区：[1]黑龙江科技学院数力系 [2]黑龙江科技学院实训中心,哈尔滨150027

出　　处：《硅酸盐学报》2010年第2期163-166,共4页Journal of The Chinese Ceramic Society

摘　　要：采用化学气相沉积法合成了高质量的铟(In)掺杂的氧化锌单晶纳米线。利用扫描电子显微镜、透射电子显微镜和粉末X射线衍射对其形貌与结构进行了表征。结果表明:纳米线的直径约为30nm,粗细均匀,具有六角纤锌矿结构。在纳米线的变温光致发光光谱中,由于In的掺杂,只观察到紫外发射峰,未见可见光发射峰;低温下的紫外发射来自于施主-受主对(donor-acceptor pair,DAP)的跃迁。随着温度的升高,DAP的跃迁逐渐减弱,在高于140K时,紫外发射来自于自由电子到中性受主(free-electron-to-neutral-acceptor,eA0)的跃迁。The single crystalline indium （In）-doped ZnO nanowire （ZNW） with large-scale and good quality was fabricated by a chemical vapor deposition method.The morphology and structure of the ZNW were investigated by scanning electron microscopy,transmission electron microscopy and powder X-ray diffraction.The results show that the diameter of the nanowire is uniform and about 30 nm.The nanowire has the hexagonal wurtzite ZnO phase structure.Only a broad ultraviolet （UV） emission peak was observed in its photoluminescence spectrum.The visible emission peak was absent.This may be induced by In doping.The UV emission peaks are donor-acceptor pair （DAP） transition at low temperature,and the DAP transition weakens as the temperature increasing.The UV emission peaks are free-electron-to-neutral-acceptor （eA0） transition above 140 K.

关 键 词：铟掺杂氧化锌 纳米线 光致发光 化学气相沉积 

分 类 号：O472.3[理学—半导体物理]