提高SiC MESFET栅金属平坦性的方法  

Methods of Improving Gate Metal Flatness for SiC MESFET

作　　者：霍玉柱[1] 商庆杰[1] 杨霏[1] 潘宏菽[1] 

机构地区：[1]专用集成电路国家级重点实验室河北半导体研究所,石家庄050051

出　　处：《半导体技术》2010年第3期221-224,共4页Semiconductor Technology

摘　　要：SiC金属-半导体场效应晶体管的工艺研制中,通常需要有源区之间的隔离。现常用刻蚀隔离的方法,但这一方法存在细栅条跨越隔离台阶的问题,若隔离台阶太陡,则栅金属在台阶处连续性较差,易产生电迁徙,器件工作时首先在此处烧毁,使器件失效。设计了几种提高栅金属平坦性的方法:通过优化台上掩模层台阶倾斜角以及调整刻蚀ICP,RIE功率可以实现18°左右倾斜台阶;通过"类平坦化"技术可以将绝缘介质淀积到台下区,基本实现无台阶;利用"离子注入隔离"取代"刻蚀隔离"则可以真正实现无台阶。实验验证以上方法可以有效提高栅金属的平坦性。Isolation mesa was always used in the manufacture of SiC MESFET. The abrupt steps will lead bad continuance of gate metal, even electromigration. All of those can lead failure of the device. Three methods of improving gate metal flatness for SiC MESFET were presented, and an around 18° tilt stage can be achieved by optimizing etching step angle of the platform mask layer and adjusting the ICP, RIE power. The isoplanar technology with SiO2 was used to minimized the mesa. The ion implantation isolation are used instead of etching isolation, so it can truly realize non-step. The experiments verifies that those methods can improve the gate metal flatness for SiC MESFET.

关 键 词：金属-半导体场效应晶体管 栅金属:平坦性 隔离台阶 电迁徙 离子注入隔离 

分 类 号：TN386.3[电子电信—物理电子学]