半导体器件金属化热电徙动的温度测试  

Temperature Test of Metallization In Semiconductor Devices

作　　者：孙英华[1] 李志国[1] 程尧海[1] 张万荣 吉元[1] 

机构地区：[1]北京工业大学电子工程学系,北京100022

出　　处：《北京工业大学学报》1998年第4期63-68,共6页Journal of Beijing University of Technology

摘　　要：在金属化布线电徙动试验中，采用金属薄膜电阻测温法精确测量了样品的局部温度，在环境温度为150℃，电流密度为3×106A／cm2和5×106A／cm2时，金属薄膜温度分别高于环境温度32．5℃和100℃；提出了扩散电阻测温法，在电徙动试验中精确测量并适时监控样品局部温度，从而实现了电流密度指数因子动态测试．The sample temperatures were tested in the metallization electromigration experiment. The tests show: that with a metal stripe under the same oven temperature of 150℃, When current density was 3 × 106A / cm2, the stripe temperature was 32.5℃higher than its ambient temperature; while the current density changed to 5 × 106A / cm2,the temperature of the stripe became 100℃ higher than its ambient temperature. Thus the temperature-test method of doped resistance is put forward to monitor and control accurately temperature of metal stripes, and a new dynamic current-ramp method for current density exponent is developed by this method.

关 键 词：半导体器件 电徒动 金属化布线 温度测试 

分 类 号：TN306[电子电信—物理电子学]