氨气流量对GaN纳米线生长及性能的影响  

Effect of the ammonia flow rate on the growth and characterization of GaN nanowires

作　　者：曹玉萍[1] 薛成山[1] 石锋[1] 孙海波[1] 刘文军[1] 郭永福[1] 

机构地区：[1]山东师范大学物理与电子科学学院半导体研究所,山东济南250014

出　　处：《功能材料》2010年第2期264-267,共4页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(90201025;90301002)

摘　　要：利用磁控溅射技术在Si衬底上沉积Ga2O3/Co薄膜,然后在不同氨气流量下于950℃退火15min。采用X射线衍射(XRD)、扫描电子显微镜(SEM)、傅立叶红外吸收(FTIR)光谱、高分辨透射电子显微镜(HRTEM)和光致发光谱(PL)对样品进行了分析表征。结果表明,氨气流量对GaN纳米线的生长及性能有很大影响。简单讨论了GaN纳米线的生长机理。Ga2O3/Co films were deposited on the Si substrates through magnetron sputtering technique.Then the films were annealed at 950℃ for 15min at different ammonia flow rate.The samples were characterized by X-ray diffraction（XRD）,scanning electron microscopy（SEM）,Fourier transformed infrared（FTIR） spectroscopy,high resolution transmission microscopy（HRTEM） and photoluminescence（PL）.The results show that the ammonia flow rate had a great effect on the growth and characterization of GaN nanowires.The growth mechanism is briefly discussed.

关 键 词：GAN 纳米线 氨气流量 溅射 生长机制 

分 类 号：TN304.23[电子电信—物理电子学]