EEPROM单元辐射机理研究  

The Research of Radiation Mechanism on EEPROM Cell

作　　者：王晓玲[1] 张国贤[1] 周昕杰[1] 

机构地区：[1]中国电子科技集团公司第五十八研究所,江苏无锡214035

出　　处：《电子与封装》2010年第3期19-22,共4页Electronics & Packaging

摘　　要：随着EEPROM存储器件在太空和军事领域的广泛应用,国际上对EEPROM抗辐射性能的研究越来越多。为了满足太空及军事领域的需要,文章分别研究了FLOTOX和SONOS两种EEPROM工艺制成的存储单元在辐射条件下所受的影响,比较了FLOTOX和SONOS单元抗辐射性能的优劣,得出由于FLOTOX单元受工艺和结构的限制,抗辐射性能不如SONOS单元。同时在做抗辐射加固设计时,FLOTOX单元还需要考虑到电压耦合比的问题,且不利于等比例缩小。文章的研究不但满足了目前的工作需要,还为以后抗辐射EEPROM制作提供了理论基础。As wide applications of EEPROM memory devices in space and military field, more and more researches focus on its radiation hardened characteristics in internationally. To improve the radiation hardened performance of EEPROM memory and meet the needs of special application, we studied two kinds of EEPROM cell： FLOTOX and SONOS. Then we compared characteristics on the basis of these technologies. We found out that the SONOS structure＇s characteristics are better than FLOTOX. And we must pay attention to the comparecoupled of voltage when we designed the FLOTOX. The research not only satisfied the needs of present work, but supplies a worthful theory for EEPROM＇s radiation hardened in future.

关 键 词：EEPROM 辐射机理 SONOS FLOTOX 

分 类 号：TN702[电子电信—电路与系统]