多晶硅纳米薄膜牺牲层压力敏感结构设计  

Design of Polysilicon Nano-film Sacrifice layer Pressure Sensor Structure

作　　者：揣荣岩[1] 崔林[1] 王健[1,2] 刘本伟[1] 郑雁公[1] 李新[1] 

机构地区：[1]沈阳工业大学信息科学与工程学院,辽宁沈阳110142 [2]沈阳化工学院,辽宁沈阳110142

出　　处：《仪表技术与传感器》2010年第2期10-12,21,共4页Instrument Technique and Sensor

基　　金：国家自然科学基金资助项目(60776049);辽宁省科学技术基金资助项目(20072036);辽宁省教育厅创新团队资助项目(2007T130);辽宁省微纳米技术及系统重点实验室;微系统与微制造辽宁省高校重点实验室开放基金资助项目

摘　　要：为使多晶硅纳米薄膜良好的压阻特性在MEMS（微机电系统）压阻传感器中得到有效应用，在设计牺牲层结构压力传感器芯片中探索性地采用了多晶硅纳米薄膜作为应变电阻，并给出这种传感器的设计方法。分析了牺牲层结构弹性膜片的应力分布对传感器灵敏度的影响，优化设计了量程为0—0．2MPa多晶硅纳米膜压力传感器芯片的结构参数。有限元法仿真结果表明：在保证传感器灵敏度大于50mV／（MPa·V）的前提下，零点温漂系数可小于1×10^-3FS／℃；灵敏度温漂（无电路补偿）可小于1×10^-1FS／℃．为高灵敏、低温漂、低成本的高温压力传感器集成化发展提供了一条可行途径。In order to develop MEMS （ micro electro mechanical system） strain sensors effectively using polysilicon nanofilms with favorable piezoresistive properties, the strain resistors made of the films were exploringly applied to the pressure sensor chips with the sacrifice layer structure, and the method of designing this kind of pressure sensor was introduced. Based on the analysis of the influence of stress distribution of sensing diaphragms with sacrifice layer structure on the sensitivity of sensors,the structure pa- rameters were designed and optimized of polysilicon nanofilm pressure sensor chip with from 0 to 0. 2 MPa measuring range, Finite element simulation results show that premising sensitivity of the sensor is more than 50 mV/MPa. V,zero drift coefficient can be less than 1 × 10 -3 FS℃ ;sensitivity drift （ no compensation） can be less than 1 × 10 -3 FS/℃. A feasible way was provided for the development of high-sensitivity, low temperature drift, low-cost high temperature integrated pressure sensor.

关 键 词：牺牲层 有限元 多晶硅纳米薄膜 密封腔 

分 类 号：TK312[动力工程及工程热物理—热能工程]